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公開日期標題作者
1-八月-2011Bipolar switching characteristics of low-power Geo resistive memoryCheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent LinearityChang, T.; Kao, H. L.; Chen, Y. J.; Liu, S. L.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain JunctionsLin, S. H.; Liu, S. L.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Low-V-t TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain JunctionsLin, S. H.; Liu, S. L.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC SubstrateChang, Tsu; Kao, Hsuan-ling; Liu, S. L.; Deng, Joseph D. S.; Horng, K. Y.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011The Reliability Study and Device Modeling for p-HEMT Microwave Power TransistorsLiu, S. L.; Chang, H. M.; Chang, T.; Kao, H. L.; Cheng, C. H.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆