Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

doi:10.1109/LED.2008.2009011

標題:	Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions
作者:	Lin, S. H. Liu, S. L. Yeh, F. S. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-一月-2009
摘要:	We report low-threshold-voltage (V(t)) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness.
URI:	http://dx.doi.org/10.1109/LED.2008.2009011 http://hdl.handle.net/11536/7837
ISSN:	0741-3106
DOI:	10.1109/LED.2008.2009011
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	30
Issue:	1
起始頁:	75
結束頁:	77
顯示於類別：	期刊論文