標題: | Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions |
作者: | Lin, S. H. Liu, S. L. Yeh, F. S. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Jan-2009 |
摘要: | We report low-threshold-voltage (V(t)) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness. |
URI: | http://dx.doi.org/10.1109/LED.2008.2009011 http://hdl.handle.net/11536/7837 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2009011 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 1 |
起始頁: | 75 |
結束頁: | 77 |
Appears in Collections: | Articles |