瀏覽 的方式: 作者 Lu, Tao-Cheng

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公開日期標題作者
17-七月-2017Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal methodLiu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
一月-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
一月-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2019Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell StringLin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Ku, S. H.; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash MemoryLin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Lu, Chun-Chang; Ku, S. H.; Chang, Y. W.; Wu, Guan-Wei; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2019Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash MemoryLiu, Yu-Heng; Zhan, Ting-Chien; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2009A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge TransportWang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics