標題: Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory
作者: Lin, Wei-Liang
Tsai, Wen-Jer
Cheng, C. C.
Lu, Chun-Chang
Ku, S. H.
Chang, Y. W.
Wu, Guan-Wei
Liu, Lenvis
Hwang, S. W.
Lu, Tao-Cheng
Chen, Kuang-Chao
Tseng, Tseung-Yuen
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2019
摘要: We investigate a hot-carrier injection- induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a "down-coupling" region and a "pre-charge" regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-turn-on schemes are proposed to mitigate this disturb.
URI: http://hdl.handle.net/11536/153665
ISBN: 978-1-7281-0942-8
ISSN: 1930-8868
期刊: 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
起始頁: 0
結束頁: 0
顯示於類別:會議論文