Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory

標題:	Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory
作者:	Lin, Wei-Liang Tsai, Wen-Jer Cheng, C. C. Lu, Chun-Chang Ku, S. H. Chang, Y. W. Wu, Guan-Wei Liu, Lenvis Hwang, S. W. Lu, Tao-Cheng Chen, Kuang-Chao Tseng, Tseung-Yuen Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Jan-2019
摘要:	We investigate a hot-carrier injection- induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a "down-coupling" region and a "pre-charge" regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-turn-on schemes are proposed to mitigate this disturb.
URI:	http://hdl.handle.net/11536/153665
ISBN:	978-1-7281-0942-8
ISSN:	1930-8868
期刊:	2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
起始頁:	0
結束頁:	0
Appears in Collections:	Conferences Paper