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公開日期標題作者
15-二月-2004Controlled placement of self-organized Ge dots on patterned Si (001) surfacesLee, HM; Yang, TH; Luo, GL; Chang, EY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
15-六月-2003Flower-like distributed self-organized Ge dots on patterned Si (001) substratesLee, HM; Yang, TH; Luo, GL; Chang, EY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-一月-2005A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrateChang, EY; Yang, TH; Luo, GL; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
2004Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucutureChang, EY; Luo, GL; Yang, TH; 材料科學與工程學系; Department of Materials Science and Engineering
15-五月-2003Growth of high-quality Ge epitaxial layers on Si(100)Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
15-六月-2004Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structureYang, TH; Yang, CS; Luo, GL; Chou, WC; Yang, TY; Chang, EY; Chang, CY; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-九月-2004Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substratesYang, TH; Luo, GL; Chang, EY; Hsieh, YC; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
15-三月-2006Optical characterization of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substratesKu, JT; Kuo, MC; Shen, JL; Chiu, KC; Yang, TH; Luo, GL; Chang, CY; Lin, YC; Fu, CP; Chuu, DS; Chia, CH; Chou, WC; 電子物理學系; Department of Electrophysics
15-三月-2006Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device applicationHsieh, YC; Chang, EY; Yeh, SS; Chang, CW; Luo, GL; Chang, CY; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2003Study of nickel silicide contact on Si/Si1-xGexYang, TH; Luo, GL; Chang, EY; Yang, TY; Tseng, HC; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
顯示 1 到 10 筆資料，總共 10 筆