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顯示 1 到 8 筆資料，總共 8 筆
公開日期標題作者
1-十月-1994ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACEJEN, TS; PAN, JW; SHIN, NF; HONG, JW; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1994ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACEJEN, TS; PAN, JW; SHIN, NF; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1994ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURESJEN, TS; SHIN, NF; TSAY, WC; CHEN, JY; NING, SL; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1992GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODESHONG, JW; SHIN, NF; JEN, TS; NING, SL; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
15-四月-1993HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTUREJEN, TS; CHEN, JY; SHIN, NF; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1993HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODESSHIN, NF; CHEN, JY; JEN, TS; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1994HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACEJEN, TS; PAN, JW; SHIN, NF; TSAY, WC; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-六月-1994INVESTIGATION OF NEW NARROW-BANDWIDTH A-SI-H PHOTODETECTORSHIN, NF; HONG, JW; WU, YF; JEN, TS; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
顯示 1 到 8 筆資料，總共 8 筆