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公開日期標題作者
29-四月-2002Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory applicationChen, SY; Sun, CL; Chen, SB; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substratesSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-二月-2003Characterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin filmsSun, CL; Wang, HW; Chang, MC; Lin, MS; Chen, SY; 材料科學與工程學系; Department of Materials Science and Engineering
17-二月-2002Characterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin filmsSun, CL; Wang, HW; Chang, MC; Lin, MS; Chen, SY; 材料科學與工程學系; Department of Materials Science and Engineering
18-三月-2002Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered SiSun, CL; Chen, SY; Chen, SB; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2003Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O-3 thin films on Al2O3 buffered Si for one-transistor memory applicationsSun, CL; Hsu, JJ; Chen, SY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-二月-2003Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-二月-2002Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-九月-2001Ferroelectric characteristics of oriented Pb(Zr1-xTix)O-3 filmsChen, SY; Sun, CL; 材料科學與工程學系; Department of Materials Science and Engineering
15-十一月-2004Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristicsSun, CL; Chen, SY; Liao, CC; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2003Role of interface reaction at high temperature in electrical characteristics of Bi3.25La0.75Ti3O12/Al2O3/Si capacitorsSun, CL; Chen, SY; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2001Stack gate PZT/Al2O3 one transistor ferroelectric memoryChin, A; Yang, MY; Sun, CL; Chen, SY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
12-七月-2005Ultrafine platinum nanoparticles uniformly dispersed on arrayed CNx nanotubes with high electrochemical activitySun, CL; Chen, LC; Su, MC; Hong, LS; Chyan, O; Hsu, CY; Chen, KH; Chang, TF; Chang, L; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 13 筆資料，總共 13 筆