國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Sun, JYC

顯示 1 到 6 筆資料，總共 6 筆

公開日期	標題	作者
1-一月-2002	Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices	Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2003	Bi-mode breakdown test methodology of ultrathin oxide	Su, HD; Chiou, BS; Ko, CY; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2003	Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxide	Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Cha, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2003	A floating well method for exact capacitance-voltage measurement of nano technology	Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2000	Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology	Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2001	Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation	Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics

顯示 1 到 6 筆資料，總共 6 筆