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公開日期標題作者
1-六月-2002Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor depositionSung, WJ; Huang, KF; Tseng, TY; 電子物理學系; Department of Electrophysics
1-十二月-2001Deep hole traps created by gamma-ray irradiation of GaInPSung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; 電子物理學系; Department of Electrophysics
1-八月-1999A dopant-related defect in Te-doped AlInPWu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-九月-2001Gamma-ray induced deep electron traps in GaInPSung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; Wu, YR; 電子物理學系; Department of Electrophysics
11-一月-1999Majority- and minority-carrier traps in Te-doped AlInPWu, YR; Sung, WJ; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-七月-1999Mg-related deep levels in AlInPWu, YR; Sung, WJ; Lee, SC; Li, TJ; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
15-六月-2000Phosphorus vacancy as a deep level in AlInP layersSung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-八月-2001Thermal-treatment induced deep electron traps in AlInPSung, WJ; Huang, KF; Lin, WJ; Tseng, TY; 電子物理學系; Department of Electrophysics
顯示 1 到 8 筆資料，總共 8 筆