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公開日期標題作者
1-二月-20011.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetectorLee, MK; Chu, CH; Wang, YH; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2002Ambipolar Schottky-barrier TFTsLin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2002Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistorLin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2002Calculation of induced electron states in three-dimensional semiconductor artificial moleculesLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-四月-2000Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin filmsWuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2002Characterization of porous silicate for ultra-low k dielectric applicationLiu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulationHuang, KY; Li, YM; Lee, CP; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2002A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
15-十一月-2001Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-六月-2003Dependence of energy gap on magnetic field in semiconductor nano-scale quantum ringsLi, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM; 交大名義發表; National Chiao Tung University
17-十一月-2003Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applicationsLiu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-四月-2004A distributed charge storage with GeO2 nanodotsChang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-八月-2002A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFETLi, YM; Chao, TS; Sze, SM; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-十一月-2001The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2002Effect of shape and size on electron transition energies of InAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-七月-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2002Effective strategy for porous organosilicate to suppress oxygen ashing damageLiu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1999Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interfaceLiu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2001Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1999Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxaneChang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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