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公開日期標題作者
1-三月-1990ANOMALOUS DIFFUSION OF CD IN INSBTU, SL; HUANG, KF; YANG, SJ; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-一月-1991FIELD-INDUCED JUNCTION IN INSB GATE-CONTROLLED DIODESLAN, WH; TU, SL; CHERNG, YT; PANG, YM; YANG, SJ; HUANG, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-六月-1993GROWTH AND CHARACTERIZATION OF BI12(SI1-XTIX)O20 MIXED-CRYSTALSYEH, TS; HU, LJ; TU, SL; YANG, SJ; HSU, SE; HSU, K; 光電工程學系; Department of Photonics
15-六月-1995GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITIONLIN, WJ; TSENG, TY; LU, HB; TU, SL; YANG, SJ; LIN, IN; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-五月-1995GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMSLIN, WJ; TSENG, TY; LIN, SP; TU, SL; YANG, SJ; HARN, JJ; LIU, KS; LIN, IN; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1-三月-1990HIGH BREAKDOWN P-CHANNEL INSB MOSFETTU, SL; LAN, WH; CHIOU, TS; YANG, SJ; HUANG, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-六月-1990INFRARED SPECTROSCOPIC STUDY OF MERCURY-SENSITIZED PHOTO-CVD SILICON-OXIDELAN, WH; TU, SL; YANG, SJ; HUANG, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-十一月-1989INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIORTU, SL; HUANG, KF; YANG, SJ; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
8-五月-1995MOLECULAR-BEAM EPITAXY REGROWTH USING A THIN IN LAYER FOR SURFACE PASSIVATIONPENG, CK; TU, SL; CHEN, SS; LIN, CC; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1992OPTIMIZATION OF DEPOSITING Y1BA2CU3O7-DELTA SUPERCONDUCTING THIN-FILMS BY EXCIMER LASER ABLATION WITH CO2 LASER-HEATED SUBSTRATESWU, KH; JUANG, JY; LEE, CL; LAI, TC; UEN, TM; GOU, YS; TU, SL; YANG, SJ; HSU, SE; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-一月-1993REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDELAN, WH; LIN, WJ; TU, SL; YANG, SJ; HUANG, KF; 電子物理學系; Department of Electrophysics
30-三月-1995RECESSED-GATE ALGAAS/INGAAS/GAAS PSEUDORMORPHIC HEMT WITH SI-PLANAR-DOPED ETCH-STOP LAYERLAN, WH; LIN, WJ; PENG, CK; CHEN, SS; TU, SL; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
10-六月-1993SHIFT-INVARIANT PHOTOREFRACTIVE JOINT-TRANSFORM CORRELATOR USING FELINBO3 CRYSTAL PLATESHE, QB; YEH, P; HU, LJ; LIN, SP; YEH, TS; TU, SL; YANG, SJ; HSU, K; 交大名義發表; National Chiao Tung University