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公開日期標題作者
1-七月-2014Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVDChi-Lang Nguyen; Nguyen Hong Quan; Binh-Tinh Tran; Su, Yung-Hsuan; Tang, Shih-Hsuan; Luo, Guang-Li; Chang, Edward-Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-三月-2013Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrationsTang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2014High Quality Ge Epitaxial Films Grown on In0.51Ga0.49P/GaAs and GaAs Substrates by Ultra High Vacuum Chemical DepositionSu, Yung-Hsuan; Tang, Shih-Hsuan; Nguyen, Chi Lang; Kuan, Ching-Wen; Yu, Hung-Wei; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
18-四月-2011High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrateTang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2013The Materials Integration of Ge and InxGa1-xAs on Si Template for Next Generation CMOS ApplicationsChang, Edward Yi; Tang, Shih-Hsuan; Lin, Yueh-Chin; 材料科學與工程學系; Department of Materials Science and Engineering
27-五月-2010Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon waferChang, Edward Yi; Tang, Shih-Hsuan; Lin, Yue-Cin
1-一月-2010Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics