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公開日期標題作者
2008The ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technologyHsieh, E. R.; Chang, Derrick W.; Chung, S. S.; Lin, Y. H.; Tsai, C. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007The channel backscattering characteristics of sub-100nm CMOS devices with different channel/substrate orientationsTsai, Y. J.; Chung, Steve S.; Liu, P. W.; Tsai, C. H.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012A Full-Color, White Light Emission of Quantum-Dot-Based Display Technology Using Pulsed Spray Method with Distributed Bragg ReflectorChen, K. J.; Chen, H. C.; Lin, C. C.; Tsai, H. H.; Tsai, K. A.; Chien, S. H.; Hsu, Y. J.; Shih, M. H.; Kuo, H. C.; Tsai, C. H.; Shih, H. H.; 光電工程學系; Department of Photonics
1-十月-2013The improvement of catalytic efficiency by optimizing Pt on carbon cloth as a cathode of a microbial fuel cellYen, S. J.; Tsai, M. C.; Wang, Z. C.; Peng, H. L.; Tsai, C. H.; Yew, T. R.; 生物科技學系; Department of Biological Science and Technology
1-十月-2006Methods of determining the contact between a probe and a surface under scanning electron microscopyNien, C. -H.; Tsai, C. H.; Shin, K. Y.; Jian, W. B.; 電子物理學系; Department of Electrophysics
2008More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable ReliabilityChung, Steve S.; Hsieh, E. R.; Huang, D. C.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008National Project on 45 to 32 nm Metal Oxide Semiconductor Field Effect Transistors for Next Century IC FabricationsHwang, Huey-liang; Wang, C. W.; Chang, K. H.; Tsai, C. H.; Leou, K. C.; Chang-Liao, Kuei-Shu; Lu, Chun-Chang; Chang, S. C.; Chiu, F. C.; Liu, C. H.; Chin, Albert; Chang, Kow-Ming; Chen, Bwo-Ning; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic RegimeHsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008New Observation of an Abnormal Leakage Current in Advanced CMOS Devices with Short Channel Lengths Down to 50nm and BeyondHsieh, E. R.; Chung, Steve S.; Lin, Y. H.; Tsai, C. H.; Liu, P. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise MeasurementLin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term StressHsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyondChung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2012Optimal design of ITO/organic photonic crystals in polymer light-emitting diodes with sidewall reflectors for high efficiencyTsai, C. H.; Chao, Paul C. -P.; 影像與生醫光電研究所; 電機工程學系; Institute of Imaging and Biomedical Photonics; Department of Electrical and Computer Engineering
1-十月-2012Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC ApplicationsYang, C. L.; Tsai, C. H.; Li, C. I.; Tzeng, C. Y.; Lin, G. P.; Chen, W. J.; Chin, Y. L.; Liao, C. I.; Chan, M.; Wu, J. Y.; Hsieh, E. R.; Guo, B. N.; Lu, S.; Colombeau, B.; Chung, S. S.; Chen, I. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Technology roadmaps on the ballistic transport in strain engineered nanoscale CMOS devicesChung, Steve S.; Tsai, Y. J.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Understanding of Multi-level RTN in Trigate MOSFETs Through the 2D Profiling of Traps and Its Impact on SRAM Performance: A New Failure Mechanism FoundHsieh, E. R.; Tsai, Y. L.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010The Understanding of Strain-Induced Device Degradation in Advanced MOSFETs with Process-Induced Strain Technology of 65nm Node and BeyondLin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013The Understanding of the Bulk Trigate MOSFET's Reliability Through the Manipulation of RTN TrapsHsieh, E. R.; Wu, P. C.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics