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公開日期標題作者
1995A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnectionSun, SC; Tsai, MH; Chiu, HT; Chuang, SH; Tsai, CE; 奈米中心; Nano Facility Center
1-五月-1996Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and SiTsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-五月-1996Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and SiTsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
27-十月-2003Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layersTu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-十月-2003Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layersTu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1995Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applicationsTsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1995Performance of MOCVD tantalum nitride diffusion barrier for copper metallizationSun, SC; Tsai, MH; Tsai, CE; Chiu, HT; 奈米中心; Nano Facility Center
1995Properties of metalorganic chemical vapor deposited tantalum nitride thin filmsSun, SC; Tsai, MH; Tsai, CE; Chiu, HT; 奈米中心; Nano Facility Center
25-一月-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
1-四月-2006Study of InGaN multiple quantum dots by metal organic chemical vapor depositionWang, TC; Kuo, HC; Lu, TC; Tsai, CE; Tsai, MY; Hsu, JT; Yang, JR; 光電工程學系; Department of Photonics
1998Syntheses and characterization of organoimido complexes of tantalum; potential single-source precursors to tantalum nitrideChiu, HT; Chuang, SH; Tsai, CE; Lee, GH; Peng, SM; 應用化學系; Department of Applied Chemistry
15-二月-2004Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor depositionTu, RC; Tun, CJ; Chuo, CC; Lee, BC; Tsai, CE; Wang, TC; Chi, J; Lee, CP; Chi, GC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics