1. 目前位置：

瀏覽 的方式： 作者 Tsai, JW

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
1-八月-1997The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layersTsai, JW; Cheng, HC; Chou, A; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect statesCheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect statesCheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000The instability mechanisms of hydrogenated amorphous silicon thin film transistors under AC bias stressHuang, CY; Teng, TH; Tsai, JW; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon depositionTsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon depositionTsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2000Turnaround phenomenon of threshold voltage shifts in amorphous silicon thin film transistors under negative bias stressHuang, CY; Tsai, JW; Teng, TH; Yang, CJ; Cheng, HC; 奈米中心; Nano Facility Center
顯示 1 到 7 筆資料，總共 7 筆