1. 目前位置：

瀏覽 的方式： 作者 Tseng, Hsueh-Chih

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
14-四月-2014Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistorsYang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-七月-2013Enhancement of the stability of resistive switching characteristics by conduction path reconstructionHuang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN StructureTseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-2013Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layerHuang, Jheng-Jie; Chang, Ting-Chang; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-一月-2013Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memoryChen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2012Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium OxideHuang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2014Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide FilmYang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
24-六月-2013Insertion of a Si layer to reduce operation current for resistive random access memory applicationsChen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2013Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memoryTseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-九月-2011Investigating the improvement of resistive switching trends after post-forming negative bias stress treatmentTseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Yang, Po-Chun; Chen, Yu-Ting; Jian, Fu-Yen; Sze, S. M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-九月-2013Low power consumption resistance random access memory with Pt/InOx/TiN structureYang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2013Resistive switching characteristics of gallium oxide for nonvolatile memory applicationYang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2011Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory applicationTseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆