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公開日期標題作者
20174H型碳化矽溝槽式閘極金氧半場效功率電晶體之關鍵製程研究曾元宏; 崔秉鉞; Tseng, Yuan-Hung; Tsui, Bing-Yue; 電子研究所
1-六月-2017Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion ImplantationTseng, Yuan-Hung; Lin, Chung-Yu; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
四月-2017A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambientTseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2017A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambientTseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2014Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O-2 and Cl-2/O-2Tseng, Yuan-Hung; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十一月-2016Trenched 4H-SiC with tapered sidewall formed by Cl-2/O-2 reactive ion etchingTseng, Yuan-Hung; Tsui, Bing-Yue; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆