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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
15-五月-1994ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAASCHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-七月-1995BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORLIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-六月-1994CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-十二月-1994PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUECHANG, EY; LIN, KC; WU, JW; CHEN, TH; CHEN, JS; WANG, SP; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-四月-1994PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCESCHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1994REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2WU, JW; CHANG, CY; LIN, KC; CHANG, EY; HWANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1995REACTIVE ION ETCHING OF GAINP, GAAS, AND ALGAASWU, JW; CHANG, CY; CHANG, EY; CHANG, SH; LIN, KC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1994THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERSCHANG, EY; CHEN, JS; WU, JW; LIN, KC; 材料科學與工程學系; Department of Materials Science and Engineering
1994THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAASWU, JW; CHAN, SH; LIN, KC; CHANG, CY; CHANG, EY; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1995SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1995SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-二月-1995THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYERWU, JW; CHANG, CY; LIN, KC; CHANG, EY; CHEN, JS; LEE, CT; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
顯示 1 到 12 筆資料，總共 12 筆