REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2

Title:	REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
Authors:	WU, JW CHANG, CY LIN, KC CHANG, EY HWANG, JH 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1994
URI:	http://hdl.handle.net/11536/20111
ISBN:	1-55899-244-8
ISSN:	0272-9172
Journal:	MATERIALS AND PROCESSES FOR ENVIRONMENTAL PROTECTION
Volume:	344
Begin Page:	295
End Page:	299
Appears in Collections:	Conferences Paper

APA	WU, J., CHANG, C., LIN, K., CHANG, E., & HWANG, J. (1994). REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2. WOS:A1994BC30J00041.
Bibtex	@article{WU1994REACTIVE, title={REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2}, author={WU, JW and CHANG, CY and LIN, KC and CHANG, EY and HWANG, JH}, journal={WOS:A1994BC30J00041}, year={1994}, url={https://ir.lib.nycu.edu.tw/handle/11536/20111}, }