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公開日期標題作者
2010Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal MethodYang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, S. J.; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1993CRITICAL CURRENT ANISOTROPY AND FLUX PINNING IN YBCO(001) AND YBCO(110) SUPERCONDUCTING THIN FILMS PREPARED BY KrF PULSED LASER ABLATIONJuang, J. Y.; Wu, K. H.; Wang, S. J.; Lai, T. C.; Kao, R. T.; Wu, C. L.; Uen, T. M.; Gou, Y. S.; 電子物理學系; Department of Electrophysics
1-七月-2009Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-七月-2009Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
1-九月-2006HfSiON n-MOSFETs using low-work function HfSi chi gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 奈米科技中心; Center for Nanoscience and Technology
1-十二月-2009High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate DielectricSu, N. C.; Wang, S. J.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2007High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETsHung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007HtLaON n-MOSFETs using a low work function HfSix gateCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010A Low Operating Voltage ZnO Thin Film Transistor Using a High-kappa HfLaO Gate DielectricSu, N. C.; Wang, S. J.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectricHung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Lin, J. W.; Hsieh, I. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2008Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C. C.; Chin, Albert; Su, N. C.; Li, M. -F.; Wang, S. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C. C.; Chin, Albert; Su, N. C.; Li, M. -F.; Wang, S. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctionsCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics