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顯示 1 到 17 筆資料，總共 17 筆
公開日期標題作者
30-九月-2013Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current densityHai-Dang Trinh; Lin, Yueh-Chin; Minh-Thuy Nguyen; Hong-Quan Nguyen; Quoc-Van Duong; Quang-Ho Luc; Wang, Shin-Yuan; Manh-Nghia Nguyen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitorCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2017Highly scaled equivalent oxide thickness of 0.66nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer depositionTsai, Ming-Li; Wang, Shin-Yuan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsHai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
2015InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/DrainWang, Shin-Yuan; Chien, Chao-Hsin; Lin, Jin-Ju; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Integration of Hetero-Structure Body-Tied Ge FinFET Using Retrograde-Well ImplantationChou, Yu-Che; Hsu, Chung-Chun; Chun, Cheng-Ting; Chou, Chen-Han; Tsai, Ming-Li; Tsai, Yi-He; Lee, Wei-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2018Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devicesHsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Tsai, Ming-Li; Wang, Shin-Yuan; Chou, Chen-Han; Zhang, Jun Lin; Luo, Guang-Li; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
九月-2016Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma TreatmentTsai, Ming-Li; Ko, Jun-Yu; Wang, Shin-Yuan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2020Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic DeviceChou, Yu-Che; Tsai, Chien-Wei; Yi, Chin-Ya; Chung, Wan-Hsuan; Wang, Shin-Yuan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure OxidationLee, Wei-Li; Zhang, Jun-Lin; Tsai, Ming-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2010A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structuresFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chen, Wei-Ren; Wang, Shin-Yuan; Chiang, Pei-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2010A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structuresFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chen, Wei-Ren; Wang, Shin-Yuan; Chiang, Pei-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 17 筆資料，總共 17 筆