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公開日期標題作者
1-一月-1996Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structureLiou, TS; Wang, TH; Chang, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-一月-2002Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devicesWang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate biasTsai, CW; Chen, MC; Ku, SH; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2006Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping techniqueGu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1998Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-2004Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistorsChen, MC; Ku, SH; Chan, CT; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETsChan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1999A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET'sWang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2006Copper interconnect electromigration behavior in various structures and precise bimodal fittingLin, MH; Lin, YL; Chang, KP; Sul, KC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2005Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical designLin, MH; Lin, YL; Chen, JM; Yeh, MS; Chang, KP; Su, KC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2004An endurance evaluation method for flash EEPROMZous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2002Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damageLee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2005Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-八月-1997Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transientChiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Field enhanced oxide charge detrapping in n-MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002A global pinching theorem for surfaces with constant mean curvature in S-3Hsu, YJ; Wang, TH; 應用數學系; Department of Applied Mathematics
1-一月-2001A global pinching theorem for surfaces with constant mean curvature in S-3Hsu, YJ; Wang, TH; 應用數學系; Department of Applied Mathematics
1-十二月-2000Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technologyWang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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