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1-七月-2000The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bondingWu, YH; Huang, CH; Chen, WJ; Lin, CN; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2001Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnectionShieh, JM; Suen, SC; Tsai, KC; Dai, BT; Wu, YC; Wu, YH; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2000The effect of copper on gate oxide integrityLin, YH; Wu, YH; Chin, A; Pan, FM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-一月-1999The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on SiWu, YH; Chen, WJ; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstromWu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2000Fabrication of very high resistivity Si with low loss and cross talkWu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2000Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7Wu, YH; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstromChin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000High temperature formed SiGeP-MOSFET's with good device characteristicsWu, YH; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2000High-quality thermal oxide grown on high-temperature-formed SiGeWu, YH; Chen, SB; Chin, A; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1997Hydrogen and oxygen plasma effects on polycrystalline silicon thin films of various thicknessesLiou, BW; Lee, CL; Lei, TF; Wu, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
1-五月-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997The market size of a city-pair route at an airportHsu, CI; Wu, YH; 交大名義發表; 運輸與物流管理系 註：原交通所+運管所; National Chiao Tung University; Department of Transportation and Logistics Management
9-七月-1998Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : HChen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000The performance limiting factors as RF MOSFETs scaling downWu, YH; Chin, A; Liang, CS; Wu, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2002Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatmentShieh, JM; Tsai, KC; Dai, BT; Wu, YC; Wu, YH; 材料科學與工程學系; Department of Materials Science and Engineering
2000Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantationWu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGeWu, YH; Chin, A; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 20 筆資料，總共 20 筆