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顯示 1 到 11 筆資料，總共 11 筆
公開日期標題作者
6-九月-2007Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrateLuo, Guangli; Chien, Chao-Hsin; Yang, Tsung-Hsi; Chang, Chun-Yen
2008Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer LayerWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; 交大名義發表; National Chiao Tung University
29-七月-2011Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxyWong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin; 材料科學與工程學系; 光電學院; 電子工程學系及電子研究所; Department of Materials Science and Engineering; College of Photonics; Department of Electronics Engineering and Institute of Electronics
1-三月-2009The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxyWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-八月-2012Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN TemplatesWong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2010Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam EpitaxyKu, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
28-十月-2006Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planesFerng, Shyh-Shin; Yang, Tsung-Hsi; Luo, Guangli; Yang, Kai-Ming; Hsieh, Ming-Feng; Lin, Deng-Sung; 物理研究所; 友訊交大聯合研發中心; Institute of Physics; D Link NCTU Joint Res Ctr
14-六月-2007Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layerChang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen
15-四月-2007High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrateLuo, Guang-Li; Hsieh, Yen-Chang; Chang, Edward Yi; Pilkuhn, M. H.; Chien, Chao-Hsin; Yang, Tsung-Hsi; Cheng, Chao-Ching; Chang, Chun-Yen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
16-四月-2009Method for forming III-nitrides semiconductor epilayer on the semiconductor substrateChang, Chun-Yen; Yang, Tsung-Hsi; Shen, Shih-Guo
2010The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBEWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
顯示 1 到 11 筆資料，總共 11 筆