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公開日期標題作者
15-十一月-2010Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport propertiesWu, W. W.; Lu, K. C.; Chen, K. N.; Yeh, P. H.; Wang, C. W.; Lin, Y. C.; Huang, Yu; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2013Effect of geometry on the magnetic properties of CoFe2O4-PbTiO3 multiferroic compositesWang, B. Y.; Wang, H. T.; Singh, Shashi B.; Shao, Y. C.; Wang, Y. F.; Chuang, C. H.; Yeh, P. H.; Chiou, J. W.; Pao, C. W.; Tsai, H. M.; Lin, H. J.; Lee, J. F.; Tsai, C. Y.; Hsieh, W. F.; Tsai, M. -H.; Pong, W. F.; 光電工程學系; Department of Photonics
26-三月-2007Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
26-三月-2007Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
10-二月-2007Metal nanocrystals as charge storage nodes for nonvolatile memory devicesYeh, P. H.; Chen, L. J.; Liu, P. T.; Wang, D. Y.; Chang, T. C.; 光電工程學系; Department of Photonics
28-五月-2007Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2016A solid-state cation exchange reaction to form multiple metal oxide heterostructure nanowiresChen, Y. H.; Huang, C. W.; Yeh, P. H.; Chen, J. Y.; Lin, T. Y.; Chang, C. F.; Wu, W. W.; 材料科學與工程學系; Department of Materials Science and Engineering
21-五月-2007Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devicesYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
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