標題: Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
作者: Yang, F. M.
Chang, T. C.
Liu, P. T.
Yeh, P. H.
Chen, U. S.
Yu, Y. C.
Lin, J. Y.
Sze, S. M.
Lou, J. C.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 21-五月-2007
摘要: The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2742573
http://hdl.handle.net/11536/10790
ISSN: 0003-6951
DOI: 10.1063/1.2742573
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 21
結束頁: 
顯示於類別:期刊論文


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