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公開日期標題作者
1-十一月-2001A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperatureLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-一月-1997Deposition of polycrystalline beta-SiC films on Si substrates at room temperatureCheng, KL; Cheng, HC; Lee, WH; Lee, CP; Liu, CC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Diagnostic techniques for polycrystalline thin film growthCheng, KL; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applicationsHu, JC; Chang, TC; Wu, CW; Chen, LJ; Hsiung, CS; Hsieh, WY; Lur, W; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-二月-2002Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees CLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1995Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2Liu, CC; Lee, CP; Cheng, KL; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Low temperature deposited highly-conductive N-type SiC thin filmsCheng, KL; Cheng, HC; Lee, WH; Lee, C; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxideChung, SS; Chen, SJ; Yang, CK; Cheng, SM; Lin, SH; Sheng, YC; Lin, HS; Hung, KT; Wu, DY; Yew, TR; Chien, SC; Liou, FT; Wen, F; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees CCheng, KL; Liu, CC; Fu, CM; Cheng, HC; Lee, C; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 9 筆資料，總共 9 筆