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公開日期標題作者
1-二月-2005Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gateZhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyChin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2004N-type Schottky barrier source/drain MOSFET using ytterbium silicideZhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆