🏛️國立陽明交通大學機構典藏

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Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures
(2004-04-01)
Chen, KM
;
Hu, HH
;
Huang, GW
;
Yeh, WK
;
Chang, CY
The low-frequency noise characteristics of partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) in silicon-on-insulator technology at various temperatures were investigated. For floating-body devices, a Lorentzian-like noise overshoot is observed due to the floating-body effect. The noise overshoot is dependent on temperature and bias, and can be reduced using a source-to-body-connected structure. At high temperature or high drain bias, the 1/f noise will be observed, and it is temperature-independent due to the trap-induced mobility fluctuation in the channel.
Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
(2005-06-01)
Chen, KM
;
Hu, HH
;
Huang, GW
;
Chang, CY
;
電子工程學系及電子研究所
In this study, we determined the effects of hot-carrier stress on the low-frequency noise characteristics of partially depleted metal-oxide-semi conductor field-effect transistors (MOSFETs) in silicon-on-insulator (SOI) technology. In devices with a floating-body configuration, kink-related excess noise was observed due to the floating-body effect. The level of this excess noise decreased after normal-mode stress, while it was masked by 1/f noise after reverse-mode stress. The effects of stress-generated interface traps on the drain-to-body leakage current and the floating-body effect were also determined and used to explain the noise behavior. Moreover, the stress-induced 1/f noise degradation in floating-body devices and body-contact devices was studied. It was found that the 1/f degradation of body-contact devices is more significant than that of floating-body devices after hot-carrier stress.
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
(2005-09-01)
Wu, JW
;
You, JW
;
Ma, HC
;
Cheng, CC
;
Hsu, CF
Low-frequency flicker noise in analog n-MOSFETs with 15-angstrom gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.
A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs
(2009-02-01)
Kuo, Jack Jyun-Yan
;
Chen, William Po-Nien
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents a comprehensive investigation of the analog performance for uniaxial strained PMOSFETs with sub-100 nm gate length. Through a comparison between co-processed strained and unstrained devices regarding important analog metrics such as transconductance to drain current ratio (g(m)/I(d)), dc gain, linearity, low-frequency noise, and device mismatch, the impact of process-induced uniaxial strain on the analog performance of MOS devices has been assessed and analyzed. Our results indicate that, although the drain current noise spectral density and drain current mismatch of the strained device under low gate voltage overdrive are increased because of the larger gate-bias sensitivity of carrier mobility, the strained device has almost the same low frequency and mismatch performance as the unstrained one at a given g(m)/I(d). This paper may provide insights for analog design using advanced strained devices.
Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
(2009-06-01)
Kuo, Jack J. -Y.
;
Chen, William P. -N.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between co-processed strained and unstrained devices, it is found that the tunneling attenuation length for channel carriers penetrating into the gate dielectric is reduced by uniaxial strain. The reduced tunneling attenuation length may result in smaller input-referred noise, which represents an intrinsic advantage of low-frequency noise performance stemming from process-induced strain.
Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
(2010-05-01)
Kuo, Jack J. -Y.
;
Chen, William P. -N.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.

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