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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.CHIU, HT

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    METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
    (1995-08-21)
    TSAI, MH
    ;
    SUN, SC
    ;
    CHIU, HT
    ;
    TSAI, CE
    ;
    CHUANG, SH
    We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
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    GROWTH OF TERNARY SI1-X-YGEXCY THIN-FILMS FROM A SINGLE-SOURCE PRECURSOR, GE(SIME(3))(4)
    (1995-09-01)
    CHIU, HT
    ;
    SHIE, SC
    ;
    CHUANG, SH
    ;
    應用化學系
    ;
    Department of Applied Chemistry
    Ge(SiMe(3))(4) was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm(-1). X-ray photoelectron spectra of a typical thin film showed binding energies of Ge-3d, Si-2p, and C-1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of beta-SiC with Ge atoms replacing some Si atoms in the lattice.
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    LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TIN AND ZRN THIN-FILMS FROM TI(NET2)4 AND ZR(NET2)4
    (1990-08-26)
    CHIU, HT
    ;
    HUANG, CC
    ;
    應用化學系
    ;
    Department of Applied Chemistry
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    LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES
    (1991-06-01)
    CHIU, HT
    ;
    WU, PF
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
    (Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.
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    ETHYLIMIDOTANTALUM COMPLEX AS PRECURSOR TO TANTALUM NITRIDE THIN-FILMS
    (1991-08-25)
    CHIU, HT
    ;
    CHANG, WP
    ;
    應用化學系
    ;
    Department of Applied Chemistry
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    DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM DODECAMETHYLCYCLOHEXASILANE
    (1991-11-15)
    CHIU, HT
    ;
    LEE, SF
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
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    DEPOSITION OF TANTALUM NITRIDE THIN-FILMS FROM ETHYLIMIDOTANTALUM COMPLEX
    (1992-01-15)
    CHIU, HT
    ;
    CHANG, WP
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
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    EFFECT OF HYDROGEN ON DEPOSITION OF TANTALUM NITRIDE THIN-FILMS FROM ETHYLIMIDOTANTALUM COMPLEX
    (1992-05-01)
    CHIU, HT
    ;
    CHANG, WP
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
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    DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE
    (1992-08-01)
    CHIU, HT
    ;
    LEE, SF
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
    1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).
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    DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
    (1992-09-01)
    CHEN, CC
    ;
    YU, JL
    ;
    LEE, CY
    ;
    LIU, CS
    ;
    CHIU, HT
    A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.