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IMPLEMENTATION OF DAMPED RESOLVED ACCELERATION CONTROL FOR A MANIPULATOR NEAR SINGULARITY
(1995-08-01)
LIN, SK
;
WU, SL
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Resolved acceleration control fails in the neighbourhood of the singularity of the Jacobian matrix. The damped least-squares method has been proposed to overcome this singularity problem. In earlier work, all components of the velocity of the end-effector were damped when a manipulator was near a singular point, so that some components of the velocity that are physically feasible were also damped, sacrificing accuracy. This paper presents a new approach that applies the damped least-squares method only to the degenerated directions since only the components of the velocity in the degenerated directions are inherently impossible to generate. This approach requires few computations and then can be implemented in real-time. Another feature is that the selection of the damping factor is a one-dimensional problem. The new damped resolved acceleration control scheme is implemented on the Puma 560 robot. The experiment results show the validity and the drawbacks of the damped resolved acceleration control in the neighbourhood of singular points.
IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING
(1990-03-12)
WU, SL
;
LEE, CL
;
LEI, TF
;
交大名義發表
;
電控工程研究所
IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING
(1990-10-29)
WU, SL
;
LEE, CL
;
LEI, TF
;
交大名義發表
;
電控工程研究所
INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILM
(1992-08-01)
WU, SL
;
LEE, CL
;
LEI, TF
;
LEE, TL
;
CHEN, LJ
The structural morphology of the poly-single crystalline silicon interface of a diode formed with a stacked-amorphous-silicon (SAS) film has been investigated. Secondary ion mass spectroscopy analyses showed the existence of multi-dopant segregation peaks at each layer boundary and at the poly-single crystalline silicon interface. The break-up at the poly-single silicon interface and the epitaxial regrowth of the polysilicon realigned to the silicon substrate were found to depend not only on the polysilicon deposition and the post annealing conditions, but also on the number and the thickness of the stacked amorphous silicon layers. For the diode formed with a six-layer stacked amorphous silicon, break-up of the interface was found to occur even at an annealing temperature as low as 900-degrees-C. After an additional annealing at 1000-degrees-C for 20 min, the interface was fully broken-up and the epitaxial regrowth layer of the polysilicon could be as thick as 760 angstrom.
CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION
(1992-08-15)
WU, SL
;
LEE, CL
;
LEI, TF
;
LIANG, MS
;
電子工程學系及電子研究所
In this study, we report a high-performance ultrathin oxide (almost-equal-to 80 angstrom) prepared by a low-temperature wafer loading and N2 preannealing before oxidation. This recipe can reduce native oxide thickness and thermal stress compared to the conventional oxidation recipe. The high-resolution transmission electron microscopy reveals that the SiO2/Si interface is atomically flat, and a thin crystalline-like oxide layer about 7 angstrom exists at the interface. Oxides prepared by the proposed recipe show a very high dielectric breakdown field (greater-than-or-equal-to 16 MV/cm) and a very low interface state density (N(it) almost-equal-to 3 X 10(9) eV-1 cm-2 at midgap). The effective barrier height at cathode derived from the slopes of log(J(g)/E2(ox)2 vs 1/E(ox) and t(bd) vs 1/E(ox) plots is about 3.9 eV, instead of 3.2 eV for the control sample. It also shows a better immunity to the charge trapping and interface state generation under high-field stressing, and superior time-dependent dielectric breakdown characteristics.
ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON
(1993-06-28)
WU, SL
;
LEE, CL
;
LEI, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter presents an ultrathin textured polycrystalline oxide (polyoxide) (less-than-or-equal-to 100 angstrom) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Q(bd) of the textured polyoxide could be more than 3000 C/cm2 even under 100 mA/cm2 stressing.
ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
(1993-07-05)
WU, SL
;
LEE, CL
;
LEI, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter reports a stacked nitride/microcrystalline-silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room-temperature resonant tunneling effect is also observed for this structure.
THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS
(1993-12-01)
WU, SL
;
LEE, CL
;
LEI, TF
;
電子工程學系及電子研究所
;
電控工程研究所
In this paper, we present high integrity thin oxides grown on the channel implanted substrate (greater-than-or-equal-to 3 x 10(17) cm-3) and heavily doped substrate (greater-than-or-equal-to 1 x 10(20) cm-3) by using a low-temperature wafer loading and N2 pre-annealing process. The presented thin oxide grown on the channel implanted substrate exhibits a very low interface state density (less-than-or-equal-to 1 x 10(10) cm-2 eV-1) and a very high intrinsic dielectric breakdown field (greater-than-or-equal-to 15 MV/cm). It also shows a lower charge trapping rate and interface state generation rate than the conventional thermal oxide. For the thin oxide grown on the heavily-doped substrate by using the proposed recipe, the implantation-induced damage close to the silicon surface can be almost annealed out. The presented heavily-doped oxide shows much better dielectric characteristics, such as the dielectric breakdown field and the charge-to-breakdown, as compared to the conventional heavily-doped oxide.
SYNTHESIS AND X-RAY-DIFFRACTION OF FERROELECTRIC LIQUID-CRYSTALLINE POLYSILOXANES CONTAINING 4'-(2-CHLORO-3-METHYL-PENTANOYLOXY)-4-ALKANYLOXYBIPHENYL SIDE-GROUPS
(1994-07-01)
HSIUE, GH
;
HSIEH, PJ
;
WU, SL
;
HSU, CS
;
應用化學系
The synthesis and characterization of side-chain liquid crystalline polysiloxanes containing (2S,3S)-4'-(2-chloro-3-methylpentanoyloxy)-4-alkanyloxybiphenyl side groups are presented. All the obtained polymers exhibit smectic mesomorphism. Those polymers containing a spacer length longer than 8 methylene units reveal respectively enantiotropic S(A), S(C)* and S(B) phases. The result demonstrates that the tendency toward the S(C)* phase increases with increasing the spacer length.
IMPLEMENTATION OF DAMPED RESOLVED ACCELERATION CONTROL FOR A MANIPULATOR NEAR SINGULARITY
(1995-08-01)
LIN, SK
;
WU, SL
;
交大名義發表
;
電控工程研究所
;
National Chiao Tung University
Resolved acceleration control fails in the neighbourhood of the singularity of the Jacobian matrix. The damped least-squares method has been proposed to overcome this singularity problem. In earlier work, all components of the velocity of the end-effector were damped when a manipulator was near a singular point, so that some components of the velocity that are physically feasible were also damped, sacrificing accuracy. This paper presents a new approach that applies the damped least-squares method only to the degenerated directions since only the components of the velocity in the degenerated directions are inherently impossible to generate. This approach requires few computations and then can be implemented in real-time. Another feature is that the selection of the damping factor is a one-dimensional problem. The new damped resolved acceleration control scheme is implemented on the Puma 560 robot. The experiment results show the validity and the drawbacks of the damped resolved acceleration control in the neighbourhood of singular points.

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