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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.ELLIPSOMETRY

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Now showing 1 - 4 of 4
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    THE ELLIPSOMETRIC MEASUREMENTS ON SIO2 BY INTENSITY RATIO TECHNIQUE
    (1994)
    CHAO, YF
    ;
    WEI, CS
    ;
    LEE, WC
    ;
    LIN, SC
    ;
    交大名義發表
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    Item type:Item,
    THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER
    (1993-06-24)
    CHAO, TS
    ;
    LEE, CL
    ;
    LEI, TF
    ;
    電控工程研究所
    ;
    Institute of Electrical and Control Engineering
    An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.
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    Item type:Item,
    MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
    (1994-04-01)
    CHAO, TS
    ;
    LEI, TF
    ;
    CHANG, CY
    ;
    LEE, CL
    ;
    電子工程學系及電子研究所
    In this study, the thickness of oxide film which is deposited by low-temperature chemical vapor deposition (LTCVD) on an implanted silicon substrate was measured by multiple-angle incident (MAI) ellipsometry. By using this method, the refractive index, thickness, and the effective index of the substrate can be calculated simultaneously. It is found that the thickness of oxide film on an implanted silicon substrate is only 4% different from that on a nonimplanted silicon substrate under the same deposition conditions. The result shows that a higher implantation energy results in a higher effective substrate index. Even with a high temperature and long annealing process, the refractive index of the implanted silicon substrate cannot recover to the value of nonimplanted silicon substrate.
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    Item type:Item,
    ELLIPSOMETRIC MEASUREMENTS AND ITS ALIGNMENT - USING THE INTENSITY RATIO TECHNIQUE
    (1995-09-01)
    CHAO, YF
    ;
    WEI, CS
    ;
    LEE, WC
    ;
    LIN, SC
    ;
    CHAO, TS
    Using first-order treatment on azimuth errors of the polarizer (P) and analyzer (A) with respect to the plane of incidence (POI), we construct two intensity ratios around a certain configuration: such as P = +/- pi/4 and A = 0 as compared to A = pi/2. These expressions can be used not only to align the azimuths of the polarizer and analyzer to the POI, hut also to obtain the ellipsometric parameter phi without locating the minimum intensity, BK7 glass and SiO2/Si thin film are ultilized to evaluate this technique.