标题: 低成本高性能高可靠度先进氧化锌奈米线场发射元件之研究
Investigations on Advanced ZnO Nanowires-Based Field Emission Devices with Low Cost, High Performance and High Reliability
作者: 曾俊元
TSENG TSEUNG-YUEN
国立交通大学电子工程学系及电子研究所
关键字: 氧化锌奈米线;奈米球微影;溅镀法;水热法;自我组装排列;场发射元件;闸极控制;场发射特性;ZnO nanowire;Nanosphere lithography;Sputtering;Hydrothermalsynthesis;Self-assembly;Field emission device;Gate control;Field emissionproperties
公开日期: 2010
摘要: 由于具备热稳定性、成本低等优点,氧化锌奈米线被认为是大面
积场发射显示器发射源的候选材料之一。对优良的场发射特性之要求
为具备较低的启动电场、低屏蔽效应、高的场效增益因子及高可靠度
的场发射特性。因此,在本三年研究计画中,主要着重上述的4 重
要的要求进行改善。将引入自组装奈米球微影限定后续水热法成长氧
锌奈米线的排列及位置进而降低屏蔽效应的影响。藉发展奈米球的自
组装于不同基板上的技术來得到精确的奈米线阵列定位控制。对于改
善场效增益因子与低的启动电场而言,将会发展不同的蚀刻技术进行
氧化锌奈米线几何形狀修饰并同时利用金属扩散的过程进行氧化锌
奈米线的掺杂來降低氧化锌奈米线的电阻率与表面功函數而得以改
善场发射特性。然后,针对电子发射源的稳定性进行测试并将测试结
果回馈到制程參數的调整而得以改善之。
最后,将会藉由半导体制程來制作各式闸极控制的场发射元件、
并量测与分析其场发射特性与可靠度,使得氧化锌奈米线实际应用于
场发射元件的目标得以实现。
Due to the advantages of thermal robustness, good stability, and low cost, the
ZnO nanowries are potential candidate being used as an electron emission source in
large area field emission display (FED). The requirements for FED having excellent
field emission characteristics comprise low turn-on field, low screen effect, high field
enhanced factor and good stability. Therefore, in this research project, the main
focuses will emphasize the improvement of four important requirements mentioned
above through novel processes. To lower the screen effect, nanosphere lithography
will be adopted to locate and arrange the positions where the ZnO nanowires are
going to hydrothermally grow. The technique of nanospheres self-assembly on
various substrates will be developed for obtaining such a precise position control. To
improve the field enhance factor and to lower the turn on field, various etching
techniques will be developed to modify the geometric shape of the ZnO nanowries
and suitable doping in the nanowires prepared by metal diffusion process will be
employed to decrease the resistivity of the ZnO nanowries and lower the work
function as well, which both improve the field emission property. The stability of the
electron emission source will be tested and improved through proper adjustment of
the processing variables based on measurement results.
Finally, the field emission devices based on the ZnO nanowires will be
fabricated by semiconductor process and their controllable field emission
characteristics and reliability will be investigated to realize the practical application of
ZnO nanowires on the field emission devices.
官方说明文件#: NSC97-2221-E009-150-MY3
URI: http://hdl.handle.net/11536/100392
https://www.grb.gov.tw/search/planDetail?id=1986939&docId=324514
显示于类别:Research Plans


文件中的档案:

  1. 972221E009150MY3(第1年).PDF
  2. 972221E009150MY3(第2年).PDF
  3. 972221E009150MY3(第3年).PDF

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.