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dc.contributor.authorCheng, C. F.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorSu, N. C.en_US
dc.contributor.authorWang, S. J.en_US
dc.contributor.authorMcAlister, S. P.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:13:02Z-
dc.date.available2014-12-08T15:13:02Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.909843en_US
dc.identifier.urihttp://hdl.handle.net/11536/10060-
dc.description.abstractAt a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm(2)/(V center dot s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-degrees C rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines.en_US
dc.language.isoen_USen_US
dc.subjectHfLaONen_US
dc.subjectHfSien_US
dc.subjectn-MOSFETsen_US
dc.titleHtLaON n-MOSFETs using a low work function HfSix gateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.909843en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue12en_US
dc.citation.spage1092en_US
dc.citation.epage1094en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251429800006-
dc.citation.woscount2-
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