HtLaON n-MOSFETs using a low work function HfSix gate

doi:10.1109/LED.2007.909843

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. F.	en_US
dc.contributor.author	Wu, C. H.	en_US
dc.contributor.author	Su, N. C.	en_US
dc.contributor.author	Wang, S. J.	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:13:02Z	-
dc.date.available	2014-12-08T15:13:02Z	-
dc.date.issued	2007-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2007.909843	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10060	-
dc.description.abstract	At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm(2)/(V center dot s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-degrees C rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines.	en_US
dc.language.iso	en_US	en_US
dc.subject	HfLaON	en_US
dc.subject	HfSi	en_US
dc.subject	n-MOSFETs	en_US
dc.title	HtLaON n-MOSFETs using a low work function HfSix gate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2007.909843	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1092	en_US
dc.citation.epage	1094	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000251429800006	-
dc.citation.woscount	2	-
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