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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorPan, H. C.en_US
dc.contributor.authorYang, H. J.en_US
dc.contributor.authorHsiao, C. N.en_US
dc.contributor.authorChou, C. P.en_US
dc.contributor.authorMcAlister, S. P.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:13:03Z-
dc.date.available2014-12-08T15:13:03Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.909612en_US
dc.identifier.urihttp://hdl.handle.net/11536/10061-
dc.description.abstractWe have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.en_US
dc.language.isoen_USen_US
dc.subjecthigh-kappaen_US
dc.subjectIren_US
dc.subjectmetal-insulator-metal (MIM)en_US
dc.subjectTiLaOen_US
dc.titleImproved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.909612en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue12en_US
dc.citation.spage1095en_US
dc.citation.epage1097en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251429800007-
dc.citation.woscount45-
Appears in Collections:Articles


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