Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

doi:10.1109/LED.2007.909612

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DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Pan, H. C.	en_US
dc.contributor.author	Yang, H. J.	en_US
dc.contributor.author	Hsiao, C. N.	en_US
dc.contributor.author	Chou, C. P.	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:13:03Z	-
dc.date.available	2014-12-08T15:13:03Z	-
dc.date.issued	2007-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2007.909612	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10061	-
dc.description.abstract	We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.	en_US
dc.language.iso	en_US	en_US
dc.subject	high-kappa	en_US
dc.subject	Ir	en_US
dc.subject	metal-insulator-metal (MIM)	en_US
dc.subject	TiLaO	en_US
dc.title	Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2007.909612	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1095	en_US
dc.citation.epage	1097	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000251429800007	-
dc.citation.woscount	45	-
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