| Title: | 金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(III) Metal-Gate/High-K Cmosfets for 45 to 22 Nm Technology Nodes (III) |
| Authors: | 荊鳳德 CHIN ALBERT 國立交通大學電子工程學系及電子研究所 |
| Keywords: | 高介電係數 金屬閘極 等效氧化層厚度 場效電晶體 臨界電壓;high-k dielectric;metal-gate;EOT;MOSFET;threshold voltage;Vt |
| Issue Date: | 2010 |
| Gov't Doc #: | NSC99-2120-M009-002 |
| URI: | http://hdl.handle.net/11536/100666 https://www.grb.gov.tw/search/planDetail?id=2149452&docId=346056 |
| Appears in Collections: | Research Plans |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
Loading...