矽鍺應力層及非應力層的探討及高速電晶體之應用

標題:	矽鍺應力層及非應力層的探討及高速電晶體之應用 Investigation of Strained and Unstrained SiGe Layer and Its Application to High Speed MOSFET
作者:	荊鳳德 CHIN ALBERT 交通大學電子工程系
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-044
URI:	http://hdl.handle.net/11536/100716 https://www.grb.gov.tw/search/planDetail?id=720340&docId=135308
Appears in Collections:	Research Plans

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