| 标题: | 新颖材料开发计画---二六族半磁性半导体磊晶核心设施之运作与新颖物理研究 Operation of Core Facility for II-VI Semimagnetic Semiconductor Epitaxy and Study of Novel Physics |
| 作者: | 周武清 CHOU WU-CHING 国立交通大学电子物理学系（所） |
| 关键字: | 分子束磊晶术;二六族化合物半导体;半磁性半导体;碲化锌;量子点;光激萤光;时间解析光激萤光;氧化镉锌;砷化镓;奈米线;molecular beam epitaxy;II-VI compound semiconductors;semimagnetic semiconductors;ZnTe;quantum dots;photoluminescence (PL);time-resolved PL;ZnCdO;GaAs;nanowire;cathodoluminescence spectroscopy;ZnMgO;Raman scattering;high-pressure techniques |
| 公开日期: | 2010 |
| 摘要: | 以电浆辅助分子束磊晶技术成长各式各样的二六族半磁性半导体量子结构，提供给国内外物理学家研究新颖的自旋与光电物理外，本研究团队将对二六族半磁性半导体单量子点自旋物理做深入的研究，并且研究单一量子点于耦合微共振腔中之量子同调操控。 A broad variety of quantum structures made of II-VI compound semiconductors grown by plasma assisted molecular beam epitaxy will support domestic and foreign physicists to study novel spin and photonic physics. In addition, the spin physics of single diluted magnetic quantum dots and the coherent quantum control of single quantum dot coupled to resonant micro-cavity will be studied. |
| 官方说明文件#: | NSC99-2119-M009-002 |
| URI: | http://hdl.handle.net/11536/100733 https://www.grb.gov.tw/search/planDetail?id=2153608&docId=346892 |
| 显示于类别： | Research Plans |
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