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dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYeh, Jui-Lungen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorChen, Uei-Shinen_US
dc.date.accessioned2014-12-08T15:13:06Z-
dc.date.available2014-12-08T15:13:06Z-
dc.date.issued2007-11-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2816125en_US
dc.identifier.urihttp://hdl.handle.net/11536/10102-
dc.description.abstractThis study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleFormation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticlesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2816125en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251324600040-
dc.citation.woscount2-
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