標題: | Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles |
作者: | Chen, Wei-Ren Chang, Ting-Chang Yeh, Jui-Lung Sze, Simon M. Chang, Chun-Yen Chen, Uei-Shin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 26-十一月-2007 |
摘要: | This study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. (C) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2816125 http://hdl.handle.net/11536/10102 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2816125 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 91 |
Issue: | 22 |
結束頁: | |
顯示於類別: | 期刊論文 |