Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 施敏 | en_US |
dc.contributor.author | SZE SIMON MIN | en_US |
dc.date.accessioned | 2014-12-13T10:49:51Z | - |
dc.date.available | 2014-12-13T10:49:51Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.govdoc | NSC98-2221-E009-001 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/101858 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1909204&docId=316576 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 奈米點記憶體元件之製作與物理機制研究(II) | zh_TW |
dc.title | Physical Mechanism Study and Fabrication of Nanocrystal for Memory Device(II) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
Appears in Collections: | Research Plans |
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