標題: | Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers |
作者: | Yang, Hung-Pin D. Hsu, I-Chen Lai, Fang-I Lin, Gray Hsiao, Ru-Shang Maleev, Nikolai A. Blokhin, Sergej A. Kuo, Hao-Chung Chi, Jim Yung 光電工程學系 Department of Photonics |
關鍵字: | broad-area;submonolayer;quantum-dot;VCSEL |
公開日期: | 1-十月-2007 |
摘要: | A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA. |
URI: | http://dx.doi.org/10.1143/JJAP.46.6670 http://hdl.handle.net/11536/10259 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.46.6670 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 46 |
Issue: | 10A |
起始頁: | 6670 |
結束頁: | 6672 |
顯示於類別: | 期刊論文 |