氟鈍化應用於次世代快閃記憶體之可靠度研究

Abstract

本計畫為氟鈍化應用於次世代快閃記憶體之可靠度研究，利用氟離子佈植進入 新式快閃記憶體內比較其優劣性，並進行氟離子佈植後的記憶體可靠度探討分析。 預計分三年度執行：第一年度為氟鈍化應用於氮化矽快閃記憶體之可靠度研究。利 用氟離子佈植並搭配氮化矽快閃記憶體，探討不同條件氟離子佈植後於記憶體元件 後的分佈情形，並建立其物理機制。目標為製作出高可靠度快閃記憶體元件，並找 到最佳化的氟離子佈植條件及製程參數。第二年度：局部單軸氮化矽應變層於氟鈍 化後氮化矽快閃記憶體之特性研究。依據第一年度最佳化氟離子佈植條件搭配上局 部氮化矽應變層於SONOS 快閃記憶體元件應用，應用局部應變層以提高驅動電流 能力改善其寫入/抹除效率，並找到最佳化氮化矽應變層厚度及製程參數。目標為製 作具有low operation voltage，large memory window，high quality retention and endurance 的高效能氮化矽快閃記體。第三年度為氟鈍化於金屬奈米點記憶體之可 靠分析與研究。應用最佳化氟離子佈植條件及應變層厚度，搭配高功函數金屬材料 及RTA 製程製作金屬奈米點記憶體，探討高功函數金屬材料及RTA 製程對金屬奈 米點記憶體特性（寫入／抹除速度、endurance 及retention）的影響，最後建立高 功函數金屬奈米點記憶體電荷流失（charge loss）可能的路徑並分析two-bit/cell 及 multi-bit/cell 高功函數金屬奈米點記憶體的特性。

The main aim of the project " Characterisitcs and reliabilities research of fluorine passivation techniques on next generation flash memory" focused on using the fluorine passivation technology to the advanced flash memory, and evaluating the impact of the fluorine passivation technology on the reliability characteristics of the fluorine-implanted flash memory. The the first year："Characterisitcs and reliabilities research of fluorine passivation techniques on SONOS-type flash memory". Applying the fluorine implantation on the SONOS type flash memory, expect to fabricate the high performance flash memory device, and find the optimal process parameter. The objective is to establish the fluorine distribution profiles and improvement mechanisms of the flash memory. The second year："Characteristics and reliabilities research of local strain on the fluorine passivated SONOS type flash memory". Combining the optimal fluorine passivation condition of the previous year and the local strain to enhance the driving current. It’s improve the program/erase efficiency and find the optimal thickness and deposition condition of the local strain layer. The purpose is to fabricate the low operation voltage, large memory window, good data retention. The third year："Characterisitcs and reliabilities research of fluorine passivation techniques on metal nanocrystal flash memory". Combine the optimal fluorine passivation condition and the local strain techniques to evaluate the effects on the program/erase efficiency, endurance and retention of the metal nanocrystal memories. In the end, I will establish physical mechanisms for the gate leakage current and metal nanocrystal nucleation and analyze the multi-bit/cell and two-bit/cell characteristic of the high work function metal nanocrystal flash memory device.