Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.contributor.author | 張嘉華 | en_US |
| dc.contributor.author | 金 海光 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:52Z | - |
| dc.date.available | 2014-12-16T06:11:52Z | - |
| dc.date.issued | 2013-06-16 | en_US |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L021/316 | zh_TW |
| dc.identifier.govdoc | H01L029/94 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103259 | - |
| dc.description.abstract | 本發明提出一種半導體元件及其製作方法。該半導體元件包含:三五族半導體層;一氧化鋁層,形成於該三五族半導體層上;以及一鑭系氧化物層,形成於該氧化鋁層上。該製造半導體元件的方法包含:形成一氧化鋁層於三五族半導體層與一鑭系氧化物層之間,以防止該三五族半導體層與該鑭系氧化物層之間的原子擴散作用。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體元件及其製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201324587 | zh_TW |
| Appears in Collections: | Patents | |
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