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dc.contributor.authorLo, Wen-Chengen_US
dc.contributor.authorKu, Ya-Hsinen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:13:28Z-
dc.date.available2014-12-08T15:13:28Z-
dc.date.issued2007-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.5715en_US
dc.identifier.urihttp://hdl.handle.net/11536/10408-
dc.description.abstractIn this study, an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabricated with local strained channel techniques on a (111) Si substrate using a SiN capping layer with high mechanical stress and the stack gate of amorphous silicon (alpha-Si) and polycrystal line silicon (poly-Si) was investigated. By using these techniques, the performance improvement of the nMOSFETs in the (110) channel direction on the (111) substrate was achieved. The on-current and transconductance (G) increased with increasing SiN capping layer or alpha-Si layer thickness. Our experimental results show that devices with a 700 A a-Si layer show a 6.7% on-current improvement percentage relative to those with a 200 A. alpha-Si layer, and a corresponding G. improvement percentage of 10.2%. In addition, charge pumping current/interface state density decreased for the samples with a thicker SiN layer.en_US
dc.language.isoen_USen_US
dc.subjectstrainen_US
dc.subject(111) substrateen_US
dc.subjectstack gateen_US
dc.subjectcharge pumpingen_US
dc.titlePerformance enhancement by local strain in (110) channel n-channel metal-oxide-semicondiactor field-effect transistors on (111) substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.5715en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue9Aen_US
dc.citation.spage5715en_US
dc.citation.epage5718en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000249626400009-
dc.citation.woscount0-
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