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dc.contributor.authorLee, WIen_US
dc.contributor.authorYoung, RLen_US
dc.contributor.authorChen, WKen_US
dc.date.accessioned2014-12-08T15:02:21Z-
dc.date.available2014-12-08T15:02:21Z-
dc.date.issued1996-09-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/1040-
dc.description.abstractA method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.en_US
dc.language.isoen_USen_US
dc.subjectZnO varistoren_US
dc.subjectdefecten_US
dc.subjectdeep levelen_US
dc.subjectDLTSen_US
dc.subjectdepth profile measurementen_US
dc.titleDeep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue9Ben_US
dc.citation.spageL1158en_US
dc.citation.epageL1160en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
Appears in Collections:Articles


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